Interfacial Thermal Transport in 2D Materials: Spatially Resolved Raman Thermometry and Transfer Stage Construction

Abstract

A brief theoretical overview of thermal boundary conductance and Raman thermometry is presented. The experimental work consists of designing, building, and using a high-precision platform for stacking of 2D materials with control over the placement and relative orientation of individual monolayers, as well as spatially resolved thermal boundary conductance measurement of an MoS2−SiO2 interface. No evidence of correlation was found between strain in the MoS2 layer and thermal boundary conductance, nor between doping in the MoS2 layer and thermal boundary conductance. An in-situ measurement of the laser spot size was conducted. The thermal boundary conductance was found to vary over an order of magnitude with respect to temperature changes between 0 and 175 K.