Effects of Graphene Oxide on the Stability of Metal-Halide Perovskite Thin Films

Abstract

Methyl ammonium lead iodide (MAPbI3) is a type of hybrid organic/inorganic perovskite material that is popular in research and development because it has shown promises to be more cost-effective, efficient, and easier to process than traditional photovoltaic materials. However, MAPbI3 can easily degrade and experience changes in electronic properties when exposed to heat, ultraviolet radiation (UV), and moisture. Graphene oxide (GO) has shown promises in other studies as being an efficient and stable hole-transporting layer to prevent charge recombination. This thesis exposed MAPbI3 sample and MAPbI3 sample covered with GO to strong violet laser to induce degradation and metallic lead formation. It was found that the addition of GO reduced the amount of metallic lead on the surface significantly, indicating that GO can be used as a stable hole-transporting layer in preventing the accumulation of trap states that can alter electronic properties.